? semiconductor components industries, llc, 2012 october, 2012 ? rev. 0 1 publication order number: ngd8209n/d ngd8209n ignition igbt 12 a, 410 v n ? channel dpak this logic level insulated gate bipolar transistor (igbt) features monolithic circuitry integrating esd and over ? voltage clamped protection for use in inductive coil drivers applications. primary uses include motorbike ignition, direct fuel injection, or wherever high voltage and high current switching is required. features ? ideal for coil ? on ? plug applications ? dpak package offers smaller footprint and increased board space ? gate ? emitter esd protection ? temperature compensated gate ? collector voltage clamp limits stress applied to load ? low saturation voltage ? high pulsed current capability ? these are pb ? free devices maximum ratings (t j = 25 c unless otherwise noted) rating symbol value unit collector ? emitter voltage v ces 445 v dc collector ? gate voltage v cer 445 v dc gate ? emitter voltage v ge 15 v dc collector current ? continuous @ t c = 25 c ? pulsed i c 12 30 a dc a ac esd (human body model) r = 1500 , c = 100 pf esd 8.0 kv esd (machine model) r = 0 , c = 200 pf esd 800 v total power dissipation @ t c = 25 c derate above 25 c p d 94 0.63 watts w/ c operating and storage temperature range t j , t stg ? 55 to +175 c stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above the recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliability. 12 amps 410 volts v ce(on) 2.0 v @ i c = 6.0 a, v ge 4.0 v dpak case 369c style 7 http://onsemi.com 1 2 3 4 c e g r g r ge marking diagram y = year ww = work week g = pb ? free device 1 gate 4 collector 2 collector 3 emitter yww ngd 8209g device package shipping ? ordering information NGD8209NT4G dpak (pb ? free) 2500 / tape & reel ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our t ape and reel packaging specifications brochure, brd8011/d.
ngd8209n http://onsemi.com 2 unclamped collector ? to ? emitter avalanche characteristics characteristic symbol value unit single pulse collector ? to ? emitter avalanche energy v cc = 50 v, v ge = 5.0 v, pk i l = 7.4 a, l = 10 mh, starting t j = 25 c e as 274 mj thermal characteristics characteristic symbol value unit thermal resistance, junction to case r jc 1.6 c/w thermal resistance, junction to ambient (note 1) r ja 105 maximum lead temperature for soldering purposes, 1/8 from case for 5 seconds t l 275 c 1. when surface mounted to an fr4 board using the minimum recommended pad size. electrical characteristics characteristic symbol test conditions temperature min typ max unit off characteristics collector ? emitter clamp voltage bv ces i c = 2.0 ma t j = ? 40 c to 150 c 380 410 435 v dc i c = 10 ma t j = ? 40 c to 150 c 390 420 445 zero gate voltage collector current i ces v ce = 350 v, v ge = 0 v t j = 25 c ? 1.0 25 a dc t j = 150 c ? 9.0 50 t j = ? 40 c ? 0.5 15 reverse collector ? emitter leakage current i ecs v ce = ? 24 v t j = 25 c ? 0.5 1.0 ma t j = 150 c ? 10 30 t j = ? 40 c ? 0.05 0.5 reverse collector ? emitter clamp voltage b vces(r) i c = ? 75 ma t j = 25 c 26 33 38 v dc t j = 150 c 29 36 41 t j = ? 40 c 24 32 36 gate ? emitter clamp voltage bv ges i g = 5.0 ma t j = ? 40 c to 150 c 10 13 16 v dc gate ? emitter leakage current i ges v ge = 10 v t j = ? 40 c to 150 c 380 635 1000 a dc gate resistor r g ? t j = ? 40 c to 150 c ? 70 ? gate emitter resistor r ge ? t j = ? 40 c to 150 c 10 16 26 k on characteristics (note 2) gate threshold voltage v ge(th) i c = 1.0 ma, v ge = v ce t j = 25 c 1.0 1.42 2.0 v dc t j = 150 c 0.7 0.95 1.5 t j = ? 40 c 1.1 1.62 2.2 threshold temperature coefficient (negative) ? ? ? ? 3.5 ? mv/ c 2. pulse test: pulse width 300 s, duty cycle 2%.
ngd8209n http://onsemi.com 3 electrical characteristics (continued) characteristic symbol test conditions temperature min typ max unit on characteristics (continued) (note 3) collector ? to ? emitter on ? voltage v ce(on) i c = 6.0 a, v ge = 4.0 v t j = 25 c 0.8 1.45 2.0 v dc t j = 150 c 0.85 1.44 1.85 t j = ? 40 c 1.0 1.5 1.95 i c = 10 a, v ge = 4.5 v t j = 25 c 1.1 1.79 2.3 t j = 150 c 1.2 1.9 2.2 t j = ? 40 c 1.3 1.77 2.2 forward transconductance gfs v ce = 5.0 v, i c = 6.0 a t j = ? 40 c to 150 c 5.0 14 30 mhos 3. pulse test: pulse width 300 s, duty cycle 2%. typical characteristics figure 1. output characteristics figure 2. output characteristics v ce , collector to emitter voltage (v) v ce , collector to emitter voltage (v) 9 8 6 5 4 2 1 0 0 10 20 30 40 50 60 9 7 6 5 4 2 1 0 0 10 20 30 40 50 60 70 figure 3. output characteristics figure 4. transfer characteristics v ge , gate to emitter voltage (v) 4.5 4.0 3.0 2.5 2.0 1.0 0.5 0 0 5 10 15 20 25 30 i c , collector current (a) i c , collector current (a) i c , collector current (a) 3710 t j = 25 c 2.5 v 3.0 v 4.0 v 5.0 v 3810 t j = ? 40 c 2.5 v 3.0 v 4.0 v 5.0 v v ce , collector to emitter voltage (v) 9 8 6 5 4 2 1 0 0 10 20 30 40 50 i c , collector current (a) 3710 t j = 150 c 2.5 v 3.0 v 4.0 v 5.0 v 1.5 3.5 5.0 v ce = 10 v ? 40 c 25 c 150 c
ngd8209n http://onsemi.com 4 typical characteristics figure 5. collector ? to ? emitter saturation voltage vs. junction temperature figure 6. collector ? to ? emitter voltage vs. gate ? to ? emitter voltage t j , junction temperature ( c) v ge , gate to emitter voltage (v) 125 100 50 0 ? 25 ? 50 0 0.25 0.75 1.00 1.25 1.50 2.00 10 9 8 7 6 5 4 0 0.25 0.50 0.75 1.25 1.50 1.75 2.00 figure 7. collector ? to ? emitter voltage vs. gate ? to ? emitter voltage figure 8. gate threshold voltage vs. junction temperature v ge , gate to emitter voltage (v) t j , junction temperature ( c) 10 9 8 7 6 5 4 0 0.25 0.50 0.75 1.00 1.50 1.75 2.00 130 90 70 30 10 ? 10 ? 30 ? 50 0 0.2 0.6 0.8 1.2 1.4 1.8 2.0 v ce , collector to emitter voltage (v) v ge(th) , gate threshold voltage (v) 25 75 150 0.50 1.75 v ge = 5 v ic = 3 a ic = 5 a ic = 8 a ic = 10 a 1.00 v ce , collector to emitter voltage (v) t j = 25 c ic = 3 a ic = 5 a ic = 8 a ic = 10 a v ce , collector to emitter voltage (v) 1.25 t j = 150 c ic = 3 a ic = 5 a ic = 8 a ic = 10 a 50 110 150 0.4 1.0 1.6
ngd8209n http://onsemi.com 5 package dimensions dpak (single gauge) case 369c issue d b d e b3 l3 l4 b2 e m 0.005 (0.13) c c2 a c c z dim min max min max millimeters inches d 0.235 0.245 5.97 6.22 e 0.250 0.265 6.35 6.73 a 0.086 0.094 2.18 2.38 b 0.025 0.035 0.63 0.89 c2 0.018 0.024 0.46 0.61 b2 0.030 0.045 0.76 1.14 c 0.018 0.024 0.46 0.61 e 0.090 bsc 2.29 bsc b3 0.180 0.215 4.57 5.46 l4 ??? 0.040 ??? 1.01 l 0.055 0.070 1.40 1.78 l3 0.035 0.050 0.89 1.27 z 0.155 ??? 3.93 ??? notes: 1. dimensioning and tolerancing per asme y14.5m, 1994. 2. controlling dimension: inches. 3. thermal pad contour optional within di- mensions b3, l3 and z. 4. dimensions d and e do not include mold flash, protrusions, or burrs. mold flash, protrusions, or gate burrs shall not exceed 0.006 inches per side. 5. dimensions d and e are determined at the outermost extremes of the plastic body. 6. datums a and b are determined at datum plane h. 12 3 4 5.80 0.228 2.58 0.102 1.60 0.063 6.20 0.244 3.00 0.118 6.17 0.243 mm inches scale 3:1 *for additional information on our pb ? free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* h 0.370 0.410 9.40 10.41 a1 0.000 0.005 0.00 0.13 l1 0.108 ref 2.74 ref l2 0.020 bsc 0.51 bsc a1 h detail a seating plane a b c l1 l h l2 gauge plane detail a rotated 90 cw style 7: pin 1. gate 2. collector 3. emitter 4. collector on semiconductor and are registered trademarks of semiconductor co mponents industries, llc (scillc). scillc owns the rights to a numb er of patents, trademarks, copyrights, trade secrets, and other intellectual property. a list ing of scillc?s product/patent coverage may be accessed at ww w.onsemi.com/site/pdf/patent ? marking.pdf. scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and s pecifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. all operating parame ters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the right s of others. scillc products are not designed, intended, or a uthorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in whic h the failure of the scillc product could create a situation where personal injury or death may occur. should buyer purchase or us e scillc products for any such unintended or unauthorized appli cation, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unin tended or unauthorized use, even if such claim alleges that scil lc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyrig ht laws and is not for resale in any manner. publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81 ? 3 ? 5817 ? 1050 ngd8209n/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 toll free usa/canada fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your local sales representative
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